The role of different types of dopants in 1.3 ?m InAs/GaAs quantum-dot lasers

Abstract The performance of O-band InAs/GaAs quantum-dot (QD) lasers grown by molecular beam epitaxy with three different doping strategies in the active region are investigated for a temperature range 17 °C–97 °C. lasing indicates that n-type technique reduced threshold current density InAs QD across full and narrowed near field spot. However, short-cavity lasers, doped laser switches from ground-state to excited-state at lower compared undoped p-type modulation-doped lasers. In contrast, have higher temperatures shorter cavity lengths 1 mm below.